- Număr parc
- TP65H015G5WS
- Producător
- Transphorm
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET GAN FET 650V 95A TO2 47
TP65H015G5WS
Imaginile sunt doar pentru referință
Specificații
- Producător
- Transphorm
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 95 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 276 W
- Qg - Gate Charge
- 68 nC
- Rds On - Drain-Source Resistance
- 18 mOhms
- Technology
- GaN
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
Categoria porumbeilor
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323,117 Produse
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567,247 Produse
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70,154 Produse
Test & Measurement
23,394 Produse
Ultimele recenzii
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Excellent transaction five star service thank you, we will do business again.
Ashley Stovall
TP65H015G5WS Știri
03/14/2023
03/13/2023
03/09/2023
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