- Număr parc
- G3R45MT17D
- Producător
- GeneSiC Semiconductor
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET 1700V 45mO TO-247-3 G3R SiC MOSFET
G3R45MT17D
Imaginile sunt doar pentru referință
Specificații
- Producător
- GeneSiC Semiconductor
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 52 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 364 W
- Qg - Gate Charge
- 106 nC
- Rds On - Drain-Source Resistance
- 45 mOhms
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.7 kV
- Vgs - Gate-Source Voltage
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
Categoria porumbeilor
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70,154 Produse
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23,394 Produse
Ultimele recenzii
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
it is safe and sound all, thank you seller!
Arturo Madril
packed pretty good, all is ok,-seller.
Julianah Yungkim
Everything is excellent! recommend this seller!
Stoyan Chaykov
The goods are OK, thank you dealers.
CHARLES SANTOS
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Persoanele care v-au cumpărat apoi G3R45MT17D
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
G3R45MT17D Știri
03/14/2023
03/13/2023
03/09/2023
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