- Număr parc
- TP65H050G4BS
- Producător
- Transphorm
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET GAN FET 650V 34A TO263
TP65H050G4BS
Imaginile sunt doar pentru referință
Specificații
- Producător
- Transphorm
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 34 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TO-263-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 119 W
- Qg - Gate Charge
- 16 nC
- Rds On - Drain-Source Resistance
- 60 mOhms
- Technology
- SI
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.8 V
Categoria porumbeilor
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42,996 Produse
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558,346 Produse
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109,177 Produse
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2,996,719 Produse
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323,117 Produse
Semiconductors
567,247 Produse
Sensors
70,154 Produse
Test & Measurement
23,394 Produse
Ultimele recenzii
packed pretty good, all is ok,-seller.
Julianah Yungkim
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
Long Service and Russia!
Alex Yu
TP65H050G4BS Știri
03/14/2023
03/13/2023
03/09/2023
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