Număr parc TP65H300G4LSG-TR Producător Transphorm Categorii RF JFET Transistors RoHS Fișa cu date TP65H300G4LSG-TR Descriere RF JFET Transistors GAN FET 650V 6.5A PQFN88
Producător Transphorm Categorii RF JFET Transistors Id - Continuous Drain Current 6.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case PQFN-8 Packaging Reel Pd - Power Dissipation 21 W Technology GaN Transistor Polarity N-Channel Transistor Type HEMT Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Breakdown Voltage - 18 V, + 18 V