TP65H300G4LSG-TR

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Specificații

Producător
Transphorm
Categorii
RF JFET Transistors
Id - Continuous Drain Current
6.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
PQFN-8
Packaging
Reel
Pd - Power Dissipation
21 W
Technology
GaN
Transistor Polarity
N-Channel
Transistor Type
HEMT
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Breakdown Voltage
- 18 V, + 18 V

Ultimele recenzii

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Works. Find the price of this product is very good

High Quality driver, works excellent. It came to Moscow for 7 days.

Decent quality, not минвелл certainly, but enough decent

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