- Număr parc
- G3R20MT12N
- Producător
- GeneSiC Semiconductor
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET 1200V 20mO SOT-227 G3R SiC MOSFET
G3R20MT12N
Imaginile sunt doar pentru referință
Specificații
- Producător
- GeneSiC Semiconductor
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 93 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- SOT-227
- Packaging
- Tube
- Pd - Power Dissipation
- 338 W
- Qg - Gate Charge
- 180 nC
- Rds On - Drain-Source Resistance
- 20 mOhms
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs - Gate-Source Voltage
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
Categoria porumbeilor
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23,394 Produse
Ultimele recenzii
it is safe and sound all, thank you seller!
Arturo Madril
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Everything is excellent! recommend this seller!
Stoyan Chaykov
fast delivery
Mike Ibarra
Everything is fine!
Jane Doe
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Persoanele care v-au cumpărat apoi G3R20MT12N
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
GeneSiC Semiconductor
G3R20MT12N Știri
03/14/2023
03/13/2023
03/09/2023
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