- Număr parc
- MTD8000M3B-T
- Producător
- Marktech Optoelectronics
- Categorii
- Phototransistors
- RoHS
- Fișa cu date
- Descriere
- Phototransistors Photo Diode 880nm
MTD8000M3B-T
Imaginile sunt doar pentru referință
Specificații
- Producător
- Marktech Optoelectronics
- Categorii
- Phototransistors
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector-Emitter Breakdown Voltage
- 20 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Dark Current
- 100 nA
- Fall Time
- 10 us
- Maximum On-State Collector Current
- 30 mA
- Maximum Operating Temperature
- + 85 C
- Minimum Operating Temperature
- - 25 C
- Mounting Style
- Through Hole
- Pd - Power Dissipation
- 80 mW
- Peak Wavelength
- 880 nm
- Product
- Phototransistors
- Rise Time
- 10 us
Categoria porumbeilor
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Ultimele recenzii
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
fast delivery
Mike Ibarra
The goods are OK, thank you dealers.
CHARLES SANTOS
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Ați putea dori, de asemenea
Marktech Optoelectronics
Marktech Optoelectronics
Marktech Optoelectronics
Marktech Optoelectronics
Persoanele care v-au cumpărat apoi MTD8000M3B-T
Marktech Optoelectronics
Marktech Optoelectronics
Marktech Optoelectronics
Marktech Optoelectronics
MTD8000M3B-T Știri
03/14/2023
03/13/2023
03/09/2023
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