Număr parc VT6X11T2R Producător ROHM Semiconductor Categorii Bipolar Transistors - BJT RoHS Fișa cu date VT6X11T2R Descriere Bipolar Transistors - BJT NPN+NPN 20VCEO 0.2A VMT6
Producător ROHM Semiconductor Categorii Bipolar Transistors - BJT Collector- Base Voltage VCBO 20 V Collector- Emitter Voltage VCEO Max 20 V Collector-Emitter Saturation Voltage 0.12 V Configuration Dual Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 400 MHz Maximum DC Collector Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case VMT-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 mW Transistor Polarity NPN