Număr parc BC 850B E6327 Producător Infineon Technologies Categorii Bipolar Transistors - BJT RoHS Fișa cu date BC 850B E6327 Descriere Bipolar Transistors - BJT NPN SilicnAF TRNSTRS
Producător Infineon Technologies Categorii Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 45 V Collector-Emitter Saturation Voltage 200 mV Configuration Dual Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 250 MHz Maximum DC Collector Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 330 mW Series BC850 Transistor Polarity NPN