Număr parc SQ3493EV-T1_GE3 Producător Vishay / Siliconix Categorii MOSFET RoHS Fișa cu date SQ3493EV-T1_GE3 Descriere MOSFET P-CHANNEL 20-V (D-S) 175C MOSFET
Producător Vishay / Siliconix Categorii MOSFET Channel Mode Enhancement Id - Continuous Drain Current 8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Cut Tape, Reel Pd - Power Dissipation 5 W Qg - Gate Charge 22.7 nC Rds On - Drain-Source Resistance 21 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 600 mV