- Număr parc
- SQ2364EES-T1_GE3
- Producător
- Vishay Semiconductors
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
SQ2364EES-T1_GE3
Imaginile sunt doar pentru referință
Specificații
- Producător
- Vishay Semiconductors
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 2 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- SOT-23-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 3 W
- Qg - Gate Charge
- 2.5 nC
- Rds On - Drain-Source Resistance
- 240 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Vgs - Gate-Source Voltage
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage
- 460 mV
Categoria porumbeilor
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Ultimele recenzii
fast delivery, item as described, thanks!!
Sandra Scheck
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Works. Find the price of this product is very good
Maxim Krasnov
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
to seller thank you! all like the photo. not tried operation. seller store recommend.
Lysandre FOLLET
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Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
Persoanele care v-au cumpărat apoi SQ2364EES-T1_GE3
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
SQ2364EES-T1_GE3 Știri
03/14/2023
03/13/2023
03/09/2023
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