Număr parc SQ2325ES-T1_GE3 Producător Vishay Semiconductors Categorii MOSFET RoHS Fișa cu date SQ2325ES-T1_GE3 Descriere MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified
Producător Vishay Semiconductors Categorii MOSFET Channel Mode Enhancement Id - Continuous Drain Current 840 mA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3 W Qg - Gate Charge 10 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 1.3 Ohms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 150 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V