Număr parc SQ3989EV-T1_GE3 Producător Vishay Semiconductors Categorii MOSFET RoHS Fișa cu date SQ3989EV-T1_GE3 Descriere MOSFET Dual P-Channel 30V TSOP-6
Producător Vishay Semiconductors Categorii MOSFET Channel Mode Enhancement Id - Continuous Drain Current 2.5 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSOP-6 Packaging Cut Tape, Reel Pd - Power Dissipation 1.67 W Qg - Gate Charge 11.1 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 140 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V