- Număr parc
- SQ3585EV-T1_GE3
- Producător
- Vishay Semiconductors
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
SQ3585EV-T1_GE3
Imaginile sunt doar pentru referință
Specificații
- Producător
- Vishay Semiconductors
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 3.57 A, 2.5 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSOP-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 1.67 W
- Qg - Gate Charge
- 2.5 nC, 3.5 nC
- Qualification
- AEC-Q101
- Rds On - Drain-Source Resistance
- 49 mOhms, 140 mOhms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Vgs - Gate-Source Voltage
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage
- 600 mV, 1.5 V
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Ultimele recenzii
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
Ați putea dori, de asemenea
Vishay Semiconductors
Persoanele care v-au cumpărat apoi SQ3585EV-T1_GE3
Vishay Semiconductors
SQ3585EV-T1_GE3 Știri
03/14/2023
03/13/2023
03/09/2023
Cuvinte cheie similare pentru SQ35
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