HUF76609D3ST

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Număr parc: HUF76609D3ST

Producător: onsemi / Fairchild

Categorii: MOSFET

RoHS

Fișa cu date: HUF76609D3ST

Descriere: MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate

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Specificații

Producător: onsemi / Fairchild

Categorii: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: TO-252-3

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 49 W

Qg - Gate Charge: 16 nC

Rds On - Drain-Source Resistance: 130 mOhms

Technology: SI

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Vgs th - Gate-Source Threshold Voltage: 3 V

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Scrie-ți propriul Reivew

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Dane Gogic

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller