Număr parc SQ4153EY-T1_GE3 Producător Vishay / Siliconix Categorii MOSFET RoHS Fișa cu date SQ4153EY-T1_GE3 Descriere MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
Producător Vishay / Siliconix Categorii MOSFET Channel Mode Enhancement Id - Continuous Drain Current 25 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 7.1 W Qg - Gate Charge 101 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 5.1 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 12 V Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 900 mV