- Număr parc
- SI1012X-T1-GE3
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
SI1012X-T1-GE3
Imaginile sunt doar pentru referință
Specificații
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 600 mA
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- SC-89-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 275 mW
- Qg - Gate Charge
- 750 pC
- Rds On - Drain-Source Resistance
- 700 mOhms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Vgs - Gate-Source Voltage
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage
- 450 mV
Categoria porumbeilor
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23,394 Produse
Ultimele recenzii
Takes 8 days to Japan. Good!
Alex Fragkos
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Ați putea dori, de asemenea
Silicon Labs
Silicon Labs
Silicon Labs
Silicon Labs
Persoanele care v-au cumpărat apoi SI1012X-T1-GE3
Silicon Labs
Silicon Labs
Silicon Labs
Silicon Labs
SI1012X-T1-GE3 Știri
03/14/2023
03/13/2023
03/09/2023
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