Număr parc SQ1470AEH-T1_GE3 Producător Vishay Semiconductors Categorii MOSFET RoHS Fișa cu date SQ1470AEH-T1_GE3 Descriere MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified
Producător Vishay Semiconductors Categorii MOSFET Channel Mode Enhancement Id - Continuous Drain Current 1.7 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-363-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3.3 W Qg - Gate Charge 5.2 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 45 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 600 mV