- Număr parc
- SQ2362ES-T1_GE3
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET N-Channel 60V AEC-Q101 Qualified
SQ2362ES-T1_GE3
Imaginile sunt doar pentru referință
Specificații
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 4.3 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- SOT-23-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 3 W
- Qg - Gate Charge
- 7.6 nC
- Qualification
- AEC-Q101
- Rds On - Drain-Source Resistance
- 68 mOhms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Ultimele recenzii
Teşekkürler
Ashir Hussain
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
Persoanele care v-au cumpărat apoi SQ2362ES-T1_GE3
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
SQ2362ES-T1_GE3 Știri
03/14/2023
03/13/2023
03/09/2023
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