- Număr parc
- SQ2337ES-T1_GE3
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET P-Channel 80V AEC-Q101 Qualified
SQ2337ES-T1_GE3
Imaginile sunt doar pentru referință
Specificații
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 2.2 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- SOT-23-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 3 W
- Qg - Gate Charge
- 11.5 nC
- Qualification
- AEC-Q101
- Rds On - Drain-Source Resistance
- 290 mOhms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Ultimele recenzii
Received, Fast shipping, not checked yet
Roy Boustany
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Takes 8 days to Japan. Good!
Alex Fragkos
Yes, they are all here. :)
sudheer kumar sirra
Perfectly.
Sensofar Tech, SL
Ați putea dori, de asemenea
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
Persoanele care v-au cumpărat apoi SQ2337ES-T1_GE3
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
SQ2337ES-T1_GE3 Știri
03/14/2023
03/13/2023
03/09/2023
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