SQ2309ES-T1_GE3

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Număr parc: SQ2309ES-T1_GE3

Producător: Vishay Semiconductors

Categorii: MOSFET

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Fișa cu date: SQ2309ES-T1_GE3

Descriere: MOSFET 60V -1.7A 2W AEC-Q101 Qualified

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Specificații

Producător: Vishay Semiconductors

Categorii: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 1.7 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: SOT-23-3

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 2 W

Qg - Gate Charge: 8.5 nC

Qualification: AEC-Q101

Rds On - Drain-Source Resistance: 268 mOhms

Technology: SI

Tradename: TrenchFET

Transistor Polarity: P-Channel

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V

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Thank you very much! Very fast shipping. High quality. Very good seller.

Klimenko Yuriy Mihaylovich

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller