- Număr parc
- SQ2309ES-T1_BE3
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET P-CHANNEL 60V (D-S)
SQ2309ES-T1_BE3
Imaginile sunt doar pentru referință
Specificații
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 1.7 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- SOT-23-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 5.5 nC
- Rds On - Drain-Source Resistance
- 335 mOhms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Ultimele recenzii
goods very well received very good quality
Fabrice Cubaynes
Yes, they are all here. :)
sudheer kumar sirra
Hello! Order received, very happy. Thank you very much!
Flavia
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Long Service and Russia!
Alex Yu
Ați putea dori, de asemenea
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
Persoanele care v-au cumpărat apoi SQ2309ES-T1_BE3
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
SQ2309ES-T1_BE3 Știri
03/14/2023
03/13/2023
03/09/2023
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