- Număr parc
- SQ3419EV-T1_GE3
- Producător
- Vishay Semiconductors
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
SQ3419EV-T1_GE3
Imaginile sunt doar pentru referință
Specificații
- Producător
- Vishay Semiconductors
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 6.9 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TSOP-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 5 W
- Qg - Gate Charge
- 7.5 nC
- Qualification
- AEC-Q101
- Rds On - Drain-Source Resistance
- 48 mOhms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Ultimele recenzii
it is safe and sound all, thank you seller!
Arturo Madril
Thank You all fine, packed very well
Ulrich Bundke
The goods are OK, thank you dealers.
CHARLES SANTOS
Looks good
Michael Beck
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
Ați putea dori, de asemenea
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
Vishay / Siliconix
Persoanele care v-au cumpărat apoi SQ3419EV-T1_GE3
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
Vishay / Siliconix
SQ3419EV-T1_GE3 Știri
03/14/2023
03/13/2023
03/09/2023
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