HUF75631S3ST

Imaginile sunt doar pentru referință
Număr parc
HUF75631S3ST
Producător
onsemi / Fairchild
Categorii
MOSFET
RoHS
Fișa cu date
Descriere
MOSFET 100V NCh PowerMOSFET UltraFET

Specificații

Producător
onsemi / Fairchild
Categorii
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
33 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-263-3
Packaging
Cut Tape, MouseReel, Reel
Pd - Power Dissipation
120 W
Qg - Gate Charge
79 nC
Rds On - Drain-Source Resistance
40 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
2 V

Ultimele recenzii

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Thank You all fine, packed very well

Goods came in two weeks. Well packed. Track number tracked

Fast shippng. Good quality. I recomend this seller.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Ați putea dori, de asemenea

Persoanele care v-au cumpărat apoi HUF75631S3ST

Cuvinte cheie similare pentru HUF7

  • HUF75631S3ST Integrat
  • HUF75631S3ST RoHS
  • HUF75631S3ST Fișa tehnică PDF
  • HUF75631S3ST Fișa cu date
  • HUF75631S3ST Parte
  • HUF75631S3ST A cumpara
  • HUF75631S3ST Distribuitor
  • HUF75631S3ST PDF
  • HUF75631S3ST component
  • HUF75631S3ST circuite integrate
  • HUF75631S3ST Descărcați PDF
  • HUF75631S3ST Descărcați foaie de date
  • HUF75631S3ST Livra
  • HUF75631S3ST Supplier
  • HUF75631S3ST Preț
  • HUF75631S3ST Fișa cu date
  • HUF75631S3ST Imagine
  • HUF75631S3ST Imagine
  • HUF75631S3ST Inventar
  • HUF75631S3ST Stoc
  • HUF75631S3ST Original
  • HUF75631S3ST Cele mai ieftine
  • HUF75631S3ST Excelent
  • HUF75631S3ST Fara plumb
  • HUF75631S3ST Specificație
  • HUF75631S3ST Oferte calificate
  • HUF75631S3ST Prețul pauzelor
  • HUF75631S3ST Date tehnice