R8002KNXC7G

Imaginile sunt doar pentru referință
Număr parc
R8002KNXC7G
Producător
ROHM Semiconductor
Categorii
MOSFET
RoHS
Fișa cu date
Descriere
MOSFET

Specificații

Producător
ROHM Semiconductor
Categorii
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
1.6 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FM-3
Packaging
Tube
Pd - Power Dissipation
28 W
Qg - Gate Charge
7.5 nC
Rds On - Drain-Source Resistance
4.2 Ohms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V, 30 V
Vgs th - Gate-Source Threshold Voltage
4.5 V

Ultimele recenzii

Received, Fast shipping, not checked yet

Everything as it is written in the description of the same deductible prodovtsu deserved 5

it is safe and sound all, thank you seller!

Hello! Order received, very happy. Thank you very much!

packed pretty good, all is ok,-seller.

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