Număr parc SQ1922AEEH-T1_GE3 Producător Vishay / Siliconix Categorii MOSFET RoHS Fișa cu date SQ1922AEEH-T1_GE3 Descriere MOSFET Dual Nch 20V Vds SOT-363
Producător Vishay / Siliconix Categorii MOSFET Channel Mode Enhancement Id - Continuous Drain Current 850 mA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SOT-363-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 1.2 nC Rds On - Drain-Source Resistance 300 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V