SQ1912AEEH-T1_GE3

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Număr parc: SQ1912AEEH-T1_GE3

Producător: Vishay / Siliconix

Categorii: MOSFET

RoHS

Fișa cu date: SQ1912AEEH-T1_GE3

Descriere: MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified

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Specificații

Producător: Vishay / Siliconix

Categorii: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 800 mA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 2 Channel

Package / Case: SOT-363-6

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 1.5 W

Qg - Gate Charge: 1.25 nC

Qualification: AEC-Q101

Rds On - Drain-Source Resistance: 200 mOhms

Technology: SI

Tradename: TrenchFET

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Vgs th - Gate-Source Threshold Voltage: 450 mV

Categoria porumbeilor

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Ultimele recenzii

Scrie-ți propriul Reivew

Quick delivery. Secure packing. Excellent product. Thank you

BHADRESH PATEL

all exactly and work. радиолюбителя useful set to, thank you)

Mahmoud Shendy

Yes, they are all here. :)

sudheer kumar sirra

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Sergio Garcia Carreon

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Kathrin Leibfritz

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Vishay / Siliconix

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Vishay / Siliconix

Vishay / Siliconix

Persoanele care v-au cumpărat apoi SQ1912AEEH-T1_GE3

Vishay / Siliconix

Vishay / Siliconix

Vishay / Siliconix

Vishay / Siliconix