- Număr parc
- SQ1922EEH-T1_GE3
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- RoHS
- Fișa cu date
- Descriere
- MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified
SQ1922EEH-T1_GE3
Imaginile sunt doar pentru referință
Specificații
- Producător
- Vishay / Siliconix
- Categorii
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 840 mA
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- SC-70-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 1.5 W
- Qg - Gate Charge
- 700 pC
- Qualification
- AEC-Q101
- Rds On - Drain-Source Resistance
- 350 mOhms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Vgs - Gate-Source Voltage
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Ultimele recenzii
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
packed pretty good, all is ok,-seller.
Julianah Yungkim
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Ați putea dori, de asemenea
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Persoanele care v-au cumpărat apoi SQ1922EEH-T1_GE3
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
Vishay / Siliconix
SQ1922EEH-T1_GE3 Știri
03/14/2023
03/13/2023
03/09/2023
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